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Covariant description of X‐ray diffraction from anisotropically relaxed epitaxial structures
Author(s) -
Zhylik A.,
Benediktovitch A.,
Feranchuk I.,
Inaba K.,
Mikhalychev A.,
Ulyanenkov A.
Publication year - 2013
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889813006171
Subject(s) - covariant transformation , diffraction , anisotropy , relaxation (psychology) , epitaxy , sapphire , basis (linear algebra) , plane (geometry) , materials science , computational physics , physics , chemistry , condensed matter physics , optics , mathematics , geometry , quantum mechanics , nanotechnology , laser , psychology , social psychology , layer (electronics)
A general theoretical approach to the description of epitaxial layers with essentially different cell parameters and in‐plane relaxation anisotropy has been developed. A covariant description of relaxation in such structures has been introduced. An iteration method for evaluation of these parameters on the basis of the diffraction data set has been worked out together with error analysis and reliability checking. The validity of the presented theoretical approaches has been proved with a ‐ZnO on r ‐sapphire samples grown in the temperature range from 573 K up to 1073 K. A covariant description of relaxation anisotropy for these samples has been estimated with data measured for different directions of the diffraction plane relative to the sample surface.