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Enhancement of field‐effect mobility due to structural ordering in poly(3‐hexylthiophene) films by the dip‐coating technique
Author(s) -
Ali Kamran,
Pietsch Ullrich,
Grigorian Souren
Publication year - 2013
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889813004718
Subject(s) - crystallinity , materials science , perpendicular , anisotropy , coating , electron mobility , layer (electronics) , organic field effect transistor , diffraction , field effect transistor , dip coating , active layer , optoelectronics , thin film transistor , composite material , transistor , optics , geometry , mathematics , physics , quantum mechanics , voltage
Organic field‐effect transistors (OFETs) were fabricated by depositing a regioregular poly(3‐hexylthiophene) (P3HT) active layer using a dip‐coating method. The field‐effect mobility in OFETs depends on chain orientation and crystallinity and is related to direction and withdrawal speed with respect to the source/drain orientation. In this paper, how to control the structural and transport properties of P3HT films by coating parallel and perpendicular to the dipping direction is demonstrated. X‐ray diffraction curves taken in the perpendicular direction exhibit a higher degree of crystalline ordering and edge‐on conformation compared with those in the parallel direction; this finding correlates with the directional anisotropy of the OFET mobility. Both structural anisotropy and transport properties are enhanced upon thermal treatment.