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Grazing‐incidence X‐ray diffraction of single GaAs nanowires at locations defined by focused ion beams
Author(s) -
Bussone Genziana,
Schott Rüdiger,
Biermanns Andreas,
Davydok Anton,
Reuter Dirk,
Carbone Gerardina,
Schülli Tobias U.,
Wieck Andreas D.,
Pietsch Ullrich
Publication year - 2013
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889813004226
Subject(s) - nanowire , reciprocal lattice , diffraction , materials science , molecular beam epitaxy , lattice (music) , substrate (aquarium) , epitaxy , ion , lattice constant , optics , optoelectronics , crystallography , nanotechnology , chemistry , physics , oceanography , organic chemistry , layer (electronics) , geology , acoustics
Grazing‐incidence X‐ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)‐oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X‐ray beam allows the in‐plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au‐implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.