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High‐speed three‐dimensional reciprocal‐space mapping during molecular beam epitaxy growth of InGaAs
Author(s) -
Hu Wen,
Suzuki Hidetoshi,
Sasaki Takuo,
Kozu Miwa,
Takahasi Masamitu
Publication year - 2012
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889812036175
Subject(s) - reciprocal lattice , molecular beam epitaxy , heterojunction , materials science , relaxation (psychology) , deposition (geology) , optics , diffraction , thin film , optoelectronics , monolayer , layer (electronics) , epitaxy , physics , nanotechnology , geology , psychology , social psychology , paleontology , sediment
This paper describes the development of a high‐speed three‐dimensional reciprocal‐space mapping method designed for the real‐time monitoring of the strain relaxation process during the growth of heterostructure semiconductors. Each three‐dimensional map is obtained by combining a set of consecutive images, which are captured during the continuous rotation of the sample, and calculating the reciprocal‐space coordinates from the detector coordinate system. To demonstrate the feasibility of this rapid mapping technique, the 022 asymmetric diffraction of an InGaAs/GaAs(001) thin film grown by molecular beam epitaxy was measured and the procedure for data calibration was examined. Subsequently, the proposed method was applied to real‐time monitoring of the strain relaxation process during the growth of a thin‐film heterostructure consisting of In 0.07 Ga 0.93 As and In 0.18 Ga 0.82 As layers consecutively deposited on GaAs(001). The time resolution of the measurement was 10 s. It was revealed that additional relaxation of the first In 0.07 Ga 0.93 As layer was induced by the growth of the second In 0.18 Ga 0.82 As layer within a short period of time corresponding to the deposition of only two monolayers of InGaAs.