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Strains in light‐ion‐implanted polycrystals: influence of grain orientation
Author(s) -
Richard Axel,
Palancher Hervé,
Castelier É.,
Micha J.S.,
Gamaleri M.,
Carlot G.,
Rouquette H.,
Goudeau P.,
Martin G.,
Rieutord F.,
Piron J. P.,
Garcia P.
Publication year - 2012
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889812027665
Subject(s) - materials science , ion , diffraction , crystallography , elasticity (physics) , ion implantation , strain (injury) , shear (geology) , condensed matter physics , composite material , optics , chemistry , physics , medicine , organic chemistry
The implantation of He ions in UO 2 polycrystals induces a strain in the implanted layer which can be characterized using Laue micro X‐ray diffraction (µ‐XRD). The strain tensor resulting from the ion implantation may not be reduced to a single out‐of‐plane strain component: it also has nonzero shear components. Their strong dependence upon crystal orientation is modeled using elasticity theory. This work demonstrates the potential of Laue µ‐XRD for characterizing radiation effects in materials.