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Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single‐nanowire X‐ray diffraction
Author(s) -
Biermanns Andreas,
Breuer Steffen,
Davydok Anton,
Geelhaar Lutz,
Pietsch Ullrich
Publication year - 2012
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889812003007
Subject(s) - nanowire , materials science , synchrotron , wurtzite crystal structure , diffraction , crystallography , phase (matter) , x ray crystallography , relaxation (psychology) , substrate (aquarium) , synchrotron radiation , strain (injury) , nanotechnology , chemistry , optics , metallurgy , psychology , social psychology , physics , oceanography , organic chemistry , geology , medicine , zinc
The structural composition, phase arrangement and residual strain of individual GaAs nanowires (NWs) grown on Si(111) have been investigated using NW‐resolved high‐resolution X‐ray diffraction employing a focused synchrotron beam. It is found that even neighbouring NWs grown on the same sample under the same growth conditions differ significantly in their phase structure, most of them exhibiting small wurtzite segments embedded between larger zincblende sections. Moreover, using structurally sensitive Bragg reflections, residual strain is observed in the zincblende sections of the NWs, likely caused by an incomplete relaxation at the substrate interface.