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Substrate‐controlled allotropic phases and growth orientation of TiO 2 epitaxial thin films
Author(s) -
Silva V. F.,
Bouquet V.,
Députier S.,
Boursicot S.,
Ollivier S.,
Weber I. T.,
Silva V. L.,
Santos I. M. G.,
GuillouxViry M.,
Perrin A.
Publication year - 2010
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889810041221
Subject(s) - anatase , rutile , materials science , sapphire , thin film , epitaxy , pulsed laser deposition , substrate (aquarium) , diffraction , single crystal , crystallography , mineralogy , analytical chemistry (journal) , chemical engineering , nanotechnology , optics , layer (electronics) , laser , chemistry , geology , organic chemistry , photocatalysis , engineering , catalysis , physics , oceanography
TiO 2 thin films were grown by pulsed laser deposition on a wide variety of oxide single‐crystal substrates and characterized in detail by four‐circle X‐ray diffraction. Films grown at 873 K on (100)‐oriented SrTiO 3 and LaAlO 3 were (001)‐oriented anatase, while on (100) MgO they were (100)‐oriented. On (110) SrTiO 3 and MgO, (102) anatase was observed. On M ‐plane and R ‐plane sapphire, (001)‐ and (101)‐oriented rutile films were obtained, respectively. On C ‐plane sapphire, the coexistence of (001) anatase, (112) anatase and (100) rutile was found; increasing the deposition temperature tended to increase the rutile proportion. Similarly, films grown at 973 K on (100) and (110) MgO showed the emergence, besides anatase, of (110) rutile. All these films were epitaxically grown, as shown by ϕ scans and/or pole figures, and the various observed orientations were explained on the basis of misfit considerations and interface arrangement.