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Nanostructural analysis of GaN tripods and hexapods grown on c ‐plane sapphire
Author(s) -
Lee Sanghwa,
Sohn Yuri,
Kim Chinkyo,
Lee Dong Ryeol,
Lee HyunHwi
Publication year - 2010
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889810036472
Subject(s) - wurtzite crystal structure , nanorod , sapphire , materials science , crystallography , synchrotron radiation , synchrotron , scattering , phase (matter) , nanotechnology , optics , chemistry , hexagonal crystal system , physics , laser , organic chemistry
The crystallographic and structural characteristics of GaN tripods and hexapods grown on c ‐plane sapphire substrates were investigated using synchrotron X‐ray scattering and microscopic analysis. The core structure of a GaN hexapod is revealed to be in the zincblende phase with an inversion domain, and a refined crystallographic analysis of tripods and hexapods with synchrotron X‐ray scattering shows the existence of the zincblende phase in wurtzite‐based protruding nanorods. The atomistic model combined with this crystallographic analysis reveals that the core size of a hexapod is much smaller than the diameters of the protruding nanorods. This refined structural analysis can be utilized in tailoring the opto‐electronic characteristics of GaN multipods.