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Implementation of statistical dynamic diffraction theory for defective semiconductor heterostructure modelling
Author(s) -
Shreeman P. K.,
Matyi R. J.
Publication year - 2010
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889810009143
Subject(s) - diffraction , heterojunction , computer science , scattering , semiconductor , kinematics , statistical analysis , statistical theory , optics , physics , optoelectronics , mathematics , quantum mechanics , statistics
Statistical dynamic diffraction theory (SDDT) provides the ability to model defect‐induced structures in high‐resolution X‐ray diffraction analyses by incorporating both coherent (dynamic) and incoherent (kinematic) scattering. Current treatments of SDDT are mathematically intensive and may not provide sufficient detail regarding the implementation of the theory in practice. This paper discusses the implementation of SDDT and the modifications that allow for successful SDDT analyses of fully relaxed SiGe on Si.