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Detection of the standing X‐ray wavefield intensity inside a thin crystal using back‐diffraction topography and imaging
Author(s) -
Honnicke Marcelo Goncalves,
Cusatis Cesar
Publication year - 2009
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889809040199
Subject(s) - diffraction , optics , standing wave , crystal (programming language) , reflection (computer programming) , absorption (acoustics) , photoelectric effect , x ray , physics , beam (structure) , intensity (physics) , materials science , detector , diffraction topography , x ray crystallography , computer science , programming language
The standing X‐ray wavefield into a single‐crystal bulk is characterized by a combination of the diffracted–reflected h‐beams and the diffracted–transmitted o‐beam. For different angular positions on the total reflection region, the standing X‐ray wavefield has its maximum from the region between the atomic planes (low photoelectric absorption) to the region on the atomic planes (high photoelectric absorption). Historically, the evidence for such a characteristic has come from experiments such as anomalous transmission (Borrmann effect, originally detected in Laue geometry) and fluorescent measurements with a single crystal under diffraction conditions. In the present work, such a characteristic is demonstrated by the direct measurement of the standing X‐ray wavefield intensity into a 50 µm‐thick single‐crystal CCD detector (Si 800) set in back‐diffraction geometry.