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Crystal structure of defect‐containing semiconductor nanocrystals – an X‐ray diffraction study
Author(s) -
Buljan Maja,
Desnica Uroš V.,
Radić Nikola,
Dražić Goran,
Matěj Zdeněk,
Valeš Václav,
Holý Václav
Publication year - 2009
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889809017476
Subject(s) - nanocrystal , diffraction , materials science , stacking , amorphous solid , x ray crystallography , crystallography , annealing (glass) , crystal structure , semiconductor , nanotechnology , optics , chemistry , optoelectronics , physics , composite material , organic chemistry
Defects of crystal structure in semiconductor nanocrystals embedded in an amorphous matrix are studied by X‐ray diffraction and a full‐profile analysis of the diffraction curves based on the Debye formula. A new theoretical model is proposed, describing the diffraction from randomly distributed intrinsic and extrinsic stacking faults and twin blocks in the nanocrystals. The application of the model to full‐profile analysis of experimental diffraction curves enables the determination of the concentrations of individual defect types in the nanocrystals. The method has been applied for the investigation of self‐organized Ge nanocrystals in an SiO 2 matrix, and the dependence of the structure quality of the nanocrystals on their deposition and annealing parameters was obtained.