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Enantiomorph identification and stacking faults in κ‐(BEDT‐TTF) 2 Cu(NCS) 2 by convergent‐beam electron diffraction
Author(s) -
Fujio Satoshi,
Tanaka Katsushi,
Inui Haruyuki,
Ueji Rintaro,
Sumida Naoto,
Yamochi Hideki,
Saito Gunzi
Publication year - 2009
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889809015702
Subject(s) - electron diffraction , tetrathiafulvalene , stacking , diffraction , crystallography , chemistry , reflection high energy electron diffraction , space group , x ray crystallography , materials science , optics , molecule , physics , organic chemistry
The convergent‐beam electron diffraction (CBED) method proposed recently for enantiomorph identification has been successfully applied to an ambient‐pressure superconductor κ‐(BEDT‐TTF) 2 Cu(NCS) 2 [BEDT‐TTF is bis(ethylenedithio)tetrathiafulvalene]. Enantiomorph identification (either the left‐handed or right‐handed form within the space group P 2 1 ) of each crystal grown of κ‐(BEDT‐TTF) 2 Cu(NCS) 2 was achieved at ambient temperature without the need to cool the specimens. Enantiomorph identification was possible within the framework of the proposed method only by taking an additional selected‐area electron diffraction pattern to eliminate the ambiguity of 180° rotation of the relevant CBED pattern about the incident beam. In the present study, all four specimens investigated exhibit the right‐handed form.