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Diffraction analysis of perovskite‐like oxides containing irregular intergrowths
Author(s) -
Olikhovska L.,
Ustinov A.
Publication year - 2009
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889808031919
Subject(s) - stacking , diffraction , crystallography , perovskite (structure) , materials science , stacking fault , intensity (physics) , lattice (music) , crystal (programming language) , x ray crystallography , crystal structure , chemistry , optics , physics , computer science , programming language , organic chemistry , acoustics
Features of the X‐ray intensity distributions caused by the presence of random and nonrandom stacking faults (irregular intergrowths) in layered perovskite‐like oxides are studied by a computer simulation technique. It is shown that, apart from the stacking fault properties, the position, profile and intensity of a diffraction peak are dependent on the ratio between the c lattice parameter of the crystal and the thickness of the new structural fragment formed as a result of the stacking fault. A means of characterizing the stacking faults on the basis of the relative positions of pairs of diffraction peaks is presented. The approach is exemplified by the X‐ray diffraction study of a disordered single crystal of the system Bi–Sr–Ca–Cu–O.