Diffraction analysis of perovskite‐like oxides containing irregular intergrowths

Features of the X‐ray intensity distributions caused by the presence of random and nonrandom stacking faults (irregular intergrowths) in layered perovskite‐like oxides are studied by a computer simulation technique. It is shown that, apart from the stacking fault properties, the position, profile and intensity of a diffraction peak are dependent on the ratio between the c lattice parameter of the crystal and the thickness of the new structural fragment formed as a result of the stacking fault. A means of characterizing the stacking faults on the basis of the relative positions of pairs of diffraction peaks is presented. The approach is exemplified by the X‐ray diffraction study of a disordered single crystal of the system Bi–Sr–Ca–Cu–O.