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Growth units and growth habit of α‐BaB 2 O 4 crystal
Author(s) -
Wan Songming,
Zhang Xia,
Zhao Sijie,
Zhang Qingli,
You Jinglin,
Chen Hui,
Zhang Guochun,
Yin Shaotang
Publication year - 2007
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889807024995
Subject(s) - crystal (programming language) , crystal habit , raman spectroscopy , bar (unit) , crystallography , crystal growth , materials science , crystal structure , stack (abstract data type) , habit , chemistry , crystallization , optics , physics , organic chemistry , psychology , psychotherapist , programming language , meteorology , computer science
The structure of the melt near a crystal–melt interface is a fundamental problem in the dynamics of crystal growth. In this work, high‐temperature Raman spectroscopy was applied to investigate in situ the structure of the melt near the α‐BaB 2 O 4 (α‐BBO) crystal–melt interface. A structured melt was found in this region: (B 3 O 6 ) 3− groups form near the interface and vanish towards the bulk melt. The crystal growth habit was then explained by the periodic bond chain (PBC) theory. At the α‐BBO crystal–melt interface, the growth units, namely the (B 3 O 6 ) 3− anion groups and Ba 2+ cations, stack mainly along four types of PBCs. These four PBCs constitute three potential F faces: {}, {} and {}. The predicted results are in good agreement with the observed growth habit of α‐BBO crystal.