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In situ investigation of the non‐linear optical crystal rubidium titanyl arsenate, RbTiOAsO 4 , under applied electric field using X‐ray imaging
Author(s) -
Thomas P. A.,
Walker D.,
Baruchel J.,
PernotRejmánková P.
Publication year - 2007
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889807011569
Subject(s) - electric field , rubidium , optics , materials science , synchrotron , single crystal , beamline , x ray , beam (structure) , chemistry , crystallography , physics , potassium , quantum mechanics , metallurgy
Recent work on the non‐linear optical single‐crystal rubidium titanyl arsenate (RbTiOAsO 4 , RTA) has shown that it exhibits behaviour consistent with a ferroelectric semiconductor under large applied electric fields, with the development of a non‐uniform field in the near‐surface region. To confirm aspects of the proposed model, the behaviour of 001 slices of initially single‐domain RTA, patterned with periodic Ag electrodes of spacing 38 µm, as for periodic poling in non‐linear optics, were investigated using synchrotron X‐ray section topography with the electric field applied in situ while under X‐ray illumination at the ID19 topography beamline of the ESRF, Grenoble. The results of white‐beam section topography as both a function of crystal to film distance, and under DC voltage are reported, confirming that there is a bending of the planes in the near‐surface region. The strain in the near‐surface region was examined directly using high‐resolution monochromatic X‐ray section topography. This revealed an extensive strain of 3 (±1) × 10 −4 at 1 kV, indicating that the electrostrictive coefficient, γ 3333 , in RTA is positive in sign.