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Quantitative analysis of molecularly stacked layer structures in supported organic thin films by synchrotron grazing‐incidence X‐ray scattering
Author(s) -
Yoon Jinhwan,
Choi Seungchel,
Jin Sangwoo,
Jin Kyeong Sik,
Heo Kyuyoung,
Ree Moonhor
Publication year - 2007
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889806056056
Subject(s) - thin film , scattering , stack (abstract data type) , materials science , substrate (aquarium) , layer (electronics) , nanoscopic scale , synchrotron , x ray , silicon , grazing incidence small angle scattering , oxide , optics , optoelectronics , analytical chemistry (journal) , crystallography , nanotechnology , chemistry , physics , computer science , organic chemistry , inelastic scattering , metallurgy , oceanography , geology , programming language , x ray raman scattering
In this study, we derive a grazing‐incidence X‐ray scattering (GIXS) formula to analyze quantitatively GIXS patterns for molecularly stacked layer structures in substrate‐supported nanoscale thin films. We apply this formula in the quantitative analysis of GIXS patterns obtained for S ‐docosanylcysteine thin films on silicon substrates with native oxide layers. This analysis successfully provides information on the structural parameters and orientation of the molecular layer stack developed in S ‐docosanylcysteine thin films.