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X‐ray bright‐field imaging analyzes crystalline quality and defects of SiC wafers
Author(s) -
Yi J. M.,
Chu Y. S.,
Zhong Y.,
Je J. H.,
Hwu Y.,
Margaritondo G.
Publication year - 2007
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889806055683
Subject(s) - wafer , diffraction , curvature , optics , materials science , lattice (music) , lattice plane , physics , reciprocal lattice , optoelectronics , geometry , mathematics , acoustics
A new variety of the recently developed technique `X‐ray bright‐field imaging' is presented. In its basic version, this approach simultaneously yields diffraction‐based information on lattice distortions and radiographic information on structural inhomogeneities, and is based on the detection of reversed diffraction contrast in transmission images. The new version extends the scope of the technique to the quantitative analysis of crystalline quality parameters such as the lattice plane curvature and mosaic distribution in SiC wafers, and makes it possible to correlate such parameters directly with defect (distortions/inhomogeneities) structures.