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GISAXS study of cavities and {113} defects induced by neon and helium implantation in silicon
Author(s) -
Babonneau David,
Peripolli Suzana,
Beaufort MarieFrance,
Barbot JeanFrançois,
Simon JeanPaul
Publication year - 2007
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889806043755
Subject(s) - neon , grazing incidence small angle scattering , materials science , ion , helium , ion implantation , scattering , silicon , atomic physics , planar , argon , optics , chemistry , optoelectronics , inelastic scattering , physics , organic chemistry , x ray raman scattering , computer graphics (images) , computer science
Grazing incidence small‐angle X‐ray scattering experiments have been performed to study the morphology of nanocavities and {113} defects formed by implantation of cm neon and helium ions in Si(001) at 50 keV. The results show that spherical cavities are formed in Si(001) implanted with Ne ions at 873 K and in Si(001) implanted with He ions at 473 K subsequently annealed at 873 K. In contrast, He‐induced cavities at 873 K show {111} facets and wide size distribution due to an enhanced He mobility at high temperature. In addition to the faceted cavities, the clustering of interstitials leads to the formation of large extended planar {113} defects whose size has been estimated to be about 100 nm.