Analytic determination of the three‐dimensional distribution of dislocations using synchrotron X‐ray topography | Zendy

Yi J. M. | Zendy; Chu Y. S. | Zendy; Argunova T. S. | Zendy; Je J. H. | Zendy

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Analytic determination of the three‐dimensional distribution of dislocations using synchrotron X‐ray topography

Author(s) -

Yi J. M.,

Chu Y. S.,

Argunova T. S.,

Je J. H.

Publication year - 2006

Publication title -

journal of applied crystallography

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.429

H-Index - 162

ISSN - 1600-5767

DOI - 10.1107/s0021889805038719

Subject(s) - dislocation , rotation (mathematics) , wafer , synchrotron , projection (relational algebra) , azimuth , materials science , optics , reflection (computer programming) , distribution (mathematics) , geometry , plane (geometry) , characterization (materials science) , x ray , crystallography , physics , condensed matter physics , mathematical analysis , mathematics , chemistry , algorithm , computer science , programming language , nanotechnology

A technique, using a symmetric reflection via azimuthal rotation of a sample, is presented for characterization of the three‐dimensional distribution of dislocations in single crystals. An analytic formula is derived to transform the three‐dimensional geometry of a straight dislocation into its two‐dimensional projection onto the detector plane. By fitting topographs to the formula, the orientations and locations of dislocations are quantitatively determined. The dislocations in a thermally stressed Si wafer are examined as an example.

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