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Analytic determination of the three‐dimensional distribution of dislocations using synchrotron X‐ray topography
Author(s) -
Yi J. M.,
Chu Y. S.,
Argunova T. S.,
Je J. H.
Publication year - 2006
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889805038719
Subject(s) - dislocation , rotation (mathematics) , wafer , synchrotron , projection (relational algebra) , azimuth , materials science , optics , reflection (computer programming) , distribution (mathematics) , geometry , plane (geometry) , characterization (materials science) , x ray , crystallography , physics , condensed matter physics , mathematical analysis , mathematics , chemistry , algorithm , computer science , programming language , nanotechnology
A technique, using a symmetric reflection via azimuthal rotation of a sample, is presented for characterization of the three‐dimensional distribution of dislocations in single crystals. An analytic formula is derived to transform the three‐dimensional geometry of a straight dislocation into its two‐dimensional projection onto the detector plane. By fitting topographs to the formula, the orientations and locations of dislocations are quantitatively determined. The dislocations in a thermally stressed Si wafer are examined as an example.