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X‐ray interferometric method for investigation of deformation fields caused in interferometer blocks by implanted ions
Author(s) -
Drmeyan H. R.
Publication year - 2004
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889804011501
Subject(s) - interferometry , ion , deformation (meteorology) , silicon , radiation , argon , optics , x ray , materials science , physics , chemistry , atomic physics , optoelectronics , composite material , quantum mechanics
Lateral deformations caused by argon ions with energy 180 keV implanted in silicon are investigated by the X‐ray interferometric method. By means of interferometric topograms, relative deformations and integral stresses are determined depending on radiation dose. Maximum local stresses are assessed to be σ x (max) = 8.4 × 10 7 N m −2 and σ y (max) = 6.7 × 10 7 N m −2 .