X‐ray interferometric method for investigation of deformation fields caused in interferometer blocks by implanted ions

Lateral deformations caused by argon ions with energy 180 keV implanted in silicon are investigated by the X‐ray interferometric method. By means of interferometric topograms, relative deformations and integral stresses are determined depending on radiation dose. Maximum local stresses are assessed to be σ x (max) = 8.4 × 10 7  N m −2 and σ y (max) = 6.7 × 10 7  N m −2 .