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Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells
Author(s) -
Zhang J. C.,
Wang J. F.,
Wang Y. T.,
Wu M.,
Liu J. P.,
Zhu J. J.,
Yang H.
Publication year - 2004
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889804005217
Subject(s) - trimethylgallium , materials science , dislocation , sapphire , non radiative recombination , photoluminescence , chemical vapor deposition , metalorganic vapour phase epitaxy , quantum well , optoelectronics , enhanced data rates for gsm evolution , optics , composite material , semiconductor , epitaxy , layer (electronics) , physics , laser , semiconductor materials , telecommunications , computer science
InGaN/GaN multiple quantum wells (MQWs) are grown by metal‐organic chemical vapour deposition on (0001) sapphire substrates. Triple‐axis X‐ray diffraction (TXRD) and photoluminescence (PL) spectra are used to assess the influence of trimethylgallium (TMGa) flow on structural defects, such as dislocations and interface roughness, and the optical properties of the MQWs. In this paper, a method, involving an ω scan of every satellite peak of TXRD, is presented to measure the mean dislocation density of InGaN/GaN MQWs. The experimental results show that under certain conditions which keep the trimethlyindium flow constant, dislocation density and interface roughness decrease with the increase of TMGa flow, which will improve the PL properties. It can be concluded that dislocations, especially edge dislocations, act as non‐radiative recombination centres in InGaN/GaN MQWs. Also noticed is that changing the TMGa flow has more influence on edge dislocations than screw dislocations.