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Grazing incidence small‐angle X‐ray scattering and diffraction study of the resistance of Mo implanted Si wafer after annealing
Author(s) -
Lee ChihHao,
Qiu ChuiZhang,
Yu KuanLi,
Liang JenqHorng,
Tsai ChunTse,
Lin MingZhe
Publication year - 2003
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889803005132
Subject(s) - scattering , diffraction , wafer , annealing (glass) , materials science , small angle scattering , small angle x ray scattering , x ray crystallography , optics , crystallography , chemistry , composite material , nanotechnology , physics
Grazing‐incidence small‐angle X‐ray scattering and X‐ray diffraction were used to probe the particle size and distribution of MoSi 2 in a Mo ion implanted Si(100) wafer at 1073 K after different annealing times. The sheet resistance of the sample decreases at the beginning of annealing due to the recovery of defects and then increases due to the growth of larger and separated particles. The particle size of MoSi 2 determined by the grazing incidence small angle X‐ray scattering is larger than that determined by the in‐plane wide angle X‐ray diffraction, which might indicate that the MoSi 2 particle consists of a larger amount of disordered components or is a cluster of several smaller well‐ordered grains.