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Grazing incidence small‐angle X‐ray scattering studies of the synthesis and growth of CdS quantum dots from constituent atoms in SiO 2 matrix
Author(s) -
Desnica U.V.,
Dubček P.,
DesnicaFrankovic I.D.,
Buljan M.,
Bernstorff S.,
White C.W.
Publication year - 2003
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889803000529
Subject(s) - quantum dot , grazing incidence small angle scattering , annealing (glass) , scattering , materials science , small angle x ray scattering , crystallography , nanotechnology , chemistry , optics , physics , small angle neutron scattering , metallurgy , neutron scattering
Grazing incidence small angle X‐ray scattering was applied to study the synthesis and growth of CdS quantum dots (QDs) from Cd and S atoms implanted in SiO 2 . For a dose of 10 17 /cm 2 , the partial synthesis of CdS QDs occurred already during implantation, with only moderate size increase upon subsequent annealing up to T a =1073 K. The dynamics of QD synthesis and growth were considerably different for just two times lower dose, where synthesis started only if the implanted samples were annealed at T a = 773 K or higher, with a strong increase of the size of QDs upon annealing at higher T a . The results suggest that high‐dose implantation followed by low‐temperature annealing could lead to better defined sizes and narrower size distributions of QDs.

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