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Small‐angle X‐ray scattering studies on oxide layer thickness at the porous silicon interface
Author(s) -
Björkqvist M.,
Salonen J.,
Laine E.
Publication year - 2003
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889803000165
Subject(s) - small angle x ray scattering , scattering , materials science , oxide , silicon , layer (electronics) , porous silicon , porosity , analytical chemistry (journal) , optics , chemistry , composite material , optoelectronics , chromatography , physics , metallurgy
We have determined the thickness of an oxide layer at the p+‐type porous silicon interface as a function of oxidation time, by using a small angle X‐ray scattering (SAXS). The scattering experiments were carried out using a Kratky camera with a step‐scanning device. Oxidation was achieved by storing the porous silicon samples in various temperatures under high relative humidity. The negative deviations from Porod's law were observed from the scattering curves of oxidized samples. The oxide layer thickness was determined from the scattering curve using a sigmoidal‐gradient approximation for the diffuse boundary. The oxide layer thickness values as a function of oxidation time, obtained using SAXS are compared to measured weight increase values, caused by the oxidation.