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Planar faults in layered Bi‐containing perovskites studied by X‐ray diffraction line profile analysis
Author(s) -
Boulle A.,
Legrand C.,
Guinebretière R.,
Mercurio J. P.,
Dauger A.
Publication year - 2001
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889801011700
Subject(s) - diffraction , stacking , anisotropy , x ray crystallography , perovskite (structure) , fourier transform , planar , materials science , crystallography , fourier analysis , stacking fault , annealing (glass) , line (geometry) , condensed matter physics , mineralogy , optics , chemistry , physics , geometry , nuclear magnetic resonance , composite material , mathematics , computer graphics (images) , quantum mechanics , computer science
Profile fitting procedures associated with integral breadth studies and Fourier analysis are applied to the study of the complex Bi‐containing layered perovskite SrBi 2 Nb 2 O 9 . Strong line broadening anisotropy is evidenced. Both `size' and `strain' effects contribute to the observed width. However, `size' broadening along the [00 l ] direction is essentially caused by stacking faults. The coherently diffracting domain sizes are deduced from Fourier analysis of the diffraction patterns and a rough estimate of the mean distance between faults is given. Thermal annealing significantly decreases the stacking fault density.