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Grazing incidence small‐angle X‐ray scattering from laterally ordered triangular pyramidal Ge islands on Si(111)
Author(s) -
Paniago R.,
Metzger H.,
Rauscher M.,
Kovats Z.,
Peisl J.,
Schulze J.,
Eisele I.,
Ferrer S.
Publication year - 2000
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889800099982
Subject(s) - scattering , perpendicular , terrace (agriculture) , substrate (aquarium) , optics , incidence (geometry) , reflection (computer programming) , materials science , grazing incidence small angle scattering , condensed matter physics , symmetry (geometry) , small angle scattering , molecular physics , geometry , crystallography , physics , chemistry , geology , x ray raman scattering , inelastic scattering , geography , oceanography , mathematics , archaeology , computer science , programming language
We present a structural study of nearly perfect triangular pyramidal Ge islands grown on Boron‐terminated Si(111). Using atomic force microscopy we show that these islands are strongly ordered in the direction perpendicular to the miscut induced terrace steps of the substrate. We use grazing incidence small‐angle X‐ray scattering to assess the island shape and size distribution. In this geometry the scattered wave amplitude is composed of four terms, including all combinations of scattering from the islands and reflection from the substrate. We finally show that this technique is able to determine the complete symmetry of arbitrary shaped objects on a substrate.