Open AccessStress-strain engineering of single-crystalline silicon membranes by ion implantation: Towards direct-gap group-IV semiconductors
Author(s) -
Mateus G. Masteghin,
Vivian Tong,
E. Schneider,
Cameron C. L. Underwood,
Tomas Peach,
B. N. Murdin,
R.P. Webb,
S. K. Clowes,
David Cox
Publication year - 2021
Publication title -
physical review materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.439
H-Index - 42
eISSN - 2476-0455
pISSN - 2475-9953
DOI - 10.1103/physrevmaterials.5.124603
Subject(s) - materials science , silicon , semiconductor , raman spectroscopy , germanium , uniaxial tension , band gap , crystalline silicon , membrane , optoelectronics , fabrication , strain engineering , ion implantation , ultimate tensile strength , ion , composite material , optics , medicine , physics , genetics , alternative medicine , pathology , biology , quantum mechanics
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