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Decisive role of interstitial defects in half-Heusler semiconductors: An ab initio study
Author(s) -
Poulumi Dey,
Biswanath Dutta
Publication year - 2021
Publication title -
physical review materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.439
H-Index - 42
eISSN - 2476-0455
pISSN - 2475-9953
DOI - 10.1103/physrevmaterials.5.035407
Subject(s) - materials science , condensed matter physics , thermoelectric effect , semiconductor , fermi level , band gap , ab initio , crystallographic defect , electronic band structure , ab initio quantum chemistry methods , electronic structure , electron , thermodynamics , optoelectronics , physics , quantum mechanics , molecule

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