
Oxygen and silicon point defects in Al 0.65 Ga 0.35 N
Author(s) -
Joshua S. Harris,
Benjamin E. Gaddy,
Ramón Collazo,
Zlatko Sitar,
Douglas L. Irving
Publication year - 2019
Publication title -
physical review materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.439
H-Index - 42
eISSN - 2476-0455
pISSN - 2475-9953
DOI - 10.1103/physrevmaterials.3.054604
Subject(s) - energy (signal processing) , crystallography , physics , impurity , acceptor , materials science , condensed matter physics , chemistry , quantum mechanics