z-logo
open-access-imgOpen Access
Oxygen and silicon point defects in Al0.65Ga0.35N
Author(s) -
Joshua S. Harris,
Benjamin E. Gaddy,
Ramón Collazo,
Zlatko Sitar,
Douglas L. Irving
Publication year - 2019
Publication title -
physical review materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.439
H-Index - 42
eISSN - 2476-0455
pISSN - 2475-9953
DOI - 10.1103/physrevmaterials.3.054604
Subject(s) - energy (signal processing) , crystallography , physics , impurity , acceptor , materials science , condensed matter physics , chemistry , quantum mechanics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom