Open AccessEnhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy
Author(s) -
Ayush Pandey,
X. Liu,
Zihao Deng,
Walter Shin,
David Laleyan,
Kishwar Mashooq,
Eric Reid,
Emmanouil Kioupakis,
P. Bhattacharya,
Zetian Mi
Publication year - 2019
Publication title -
physical review materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.439
H-Index - 42
eISSN - 2476-0455
pISSN - 2475-9953
DOI - 10.1103/physrevmaterials.3.053401
Subject(s) - materials science , molecular beam epitaxy , doping , band gap , dopant , epitaxy , semiconductor , condensed matter physics , optoelectronics , fermi level , nanotechnology , physics , electron , layer (electronics) , quantum mechanics
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