Open AccessBand gap and mobility of epitaxial perovskite BaSn 1 − x Hf x O 3
Author(s) -
JunSeop Shin,
Jinyoung Lim,
Taewoo Ha,
Young Mo Kim,
Chulkwon Park,
Jaejun Yu,
Jae-Hoon Kim,
K. Char
Publication year - 2018
Publication title -
physical review materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.439
H-Index - 42
eISSN - 2476-0455
pISSN - 2475-9953
DOI - 10.1103/physrevmaterials.2.021601
Subject(s) - materials science , heterojunction , doping , epitaxy , band gap , perovskite (structure) , pulsed laser deposition , lattice constant , crystallography , condensed matter physics , diffraction , thin film , nanotechnology , physics , optoelectronics , optics , layer (electronics) , chemistry