Open AccessElectronic properties of doped and defective NiO: A quantum Monte Carlo study
Author(s) -
Hyeondeok Shin,
Ye Luo,
Panchapakesan Ganesh,
Janakiraman Balachandran,
Jaron T. Krogel,
Paul R. C. Kent,
Anouar Benali,
Olle Hein
Publication year - 2017
Publication title -
physical review materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.439
H-Index - 42
eISSN - 2476-0455
pISSN - 2475-9953
DOI - 10.1103/physrevmaterials.1.073603
Subject(s) - non blocking i/o , dopant , materials science , density functional theory , mott insulator , quantum monte carlo , condensed matter physics , doping , electronic structure , charge (physics) , monte carlo method , electron , spin (aerodynamics) , vacancy defect , physics , quantum mechanics , chemistry , thermodynamics , biochemistry , statistics , mathematics , catalysis
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