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Spiral Growth without Dislocations: Molecular Beam Epitaxy of the Topological InsulatorBi2Se3on Epitaxial Graphene/SiC(0001)
Author(s) -
Y. Liu,
M. Weinert,
L. Li
Publication year - 2012
Publication title -
physical review letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.688
H-Index - 673
eISSN - 1079-7114
pISSN - 0031-9007
DOI - 10.1103/physrevlett.108.115501
Subject(s) - molecular beam epitaxy , nucleation , scanning tunneling microscope , topological insulator , epitaxy , coalescence (physics) , materials science , condensed matter physics , graphene , van der waals force , spiral (railway) , physics , nanotechnology , quantum mechanics , thermodynamics , molecule , layer (electronics) , mathematical analysis , mathematics , astrobiology

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