Open AccessLimits on Passivating Defects in Semiconductors: The Case of Si Edge Dislocations
Author(s) -
Tzu-Liang Chan,
Damien West,
Shengbai Zhang
Publication year - 2011
Publication title -
physical review letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.688
H-Index - 673
eISSN - 1079-7114
pISSN - 0031-9007
DOI - 10.1103/physrevlett.107.035503
Subject(s) - materials science , semiconductor , enhanced data rates for gsm evolution , condensed matter physics , silicon , optoelectronics , physics , computer science , telecommunications
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom