Open AccessIn-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides
Author(s) -
ZhiQiang Fan,
Xiangwei Jiang,
JunWei Luo,
Liying Jiao,
Ru Huang,
ShuShen Li,
LinWang Wang
Publication year - 2017
Publication title -
physical review. b./physical review. b
Language(s) - English
Resource type - Journals
eISSN - 2469-9969
pISSN - 2469-9950
DOI - 10.1103/physrevb.96.165402
Subject(s) - heterojunction , schottky barrier , condensed matter physics , materials science , subthreshold swing , semiconductor , transistor , schottky diode , optoelectronics , monolayer , transition metal , field effect transistor , atomic units , nanotechnology , physics , voltage , chemistry , quantum mechanics , biochemistry , diode , catalysis