Open AccessSemiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strain
Author(s) -
Shengli Zhang,
Meiqiu Xie,
Bo Cai,
Haijun Zhang,
Yandong Ma,
Zhongfang Chen,
Zhen Zhu,
Ziyu Hu,
Haibo Zeng
Publication year - 2016
Publication title -
physical review. b./physical review. b
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.78
H-Index - 465
eISSN - 2469-9969
pISSN - 2469-9950
DOI - 10.1103/physrevb.93.245303
Subject(s) - antimonide , topological insulator , condensed matter physics , topological order , topology (electrical circuits) , materials science , band gap , semiconductor , physics , optoelectronics , quantum , quantum mechanics , electrical engineering , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom