z-logo
open-access-imgOpen Access
Influence of interface coupling on the electronic properties of theAu/MoS2junction
Author(s) -
Matt Cook,
Robert Palandech,
Keith Doore,
Zhipeng Ye,
Gaihua Ye,
Rui He,
Andrew Stollenwerk
Publication year - 2015
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.92.201302
Subject(s) - materials science , quantum tunnelling , schottky barrier , coupling (piping) , condensed matter physics , transmission electron microscopy , raman spectroscopy , thin film , fermi level , nanotechnology , electron , optics , physics , optoelectronics , composite material , quantum mechanics , diode

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom