Open AccessThermal transport across high-pressure semiconductor-metal transition in Si andSi 0.991 Ge 0.009
Author(s) -
Gregory T. Hohensee,
Michael R. Fellinger,
Dallas R. Trinkle,
David G. Cahill
Publication year - 2015
Publication title -
physical review. b, condensed matter and materials physics
Language(s) - Italian
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.91.205104
Subject(s) - materials science , diamond anvil cell , condensed matter physics , anisotropy , thermal conductivity , silicon , metal , electrical resistivity and conductivity , semiconductor , diamond , physics , high pressure , thermodynamics , optoelectronics , optics , metallurgy , composite material , quantum mechanics