Deep electron traps and origin ofp-type conductivity in the earth-abundant solar-cell material Cu2ZnSnS4 | Zendy

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Deep electron traps and origin ofp-type conductivity in the earth-abundant solar-cell material Cu2ZnSnS4

Author(s) -

Dong Han,

Yiyang Sun,

Junhyeok Bang,

Y. Y. Zhang,

HongBo Sun,

Xianbin Li,

S. B. Zhang

Publication year - 2013

Publication title -

physical review. b, condensed matter and materials physics

Language(s) - English

Resource type - Journals

eISSN - 1538-4489

pISSN - 1098-0121

DOI - 10.1103/physrevb.87.155206

Subject(s) - czts , vacancy defect , acceptor , materials science , electron , condensed matter physics , physics , solar cell , optoelectronics , quantum mechanics

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