Open AccessUniaxial strain induced band splitting in semiconducting SrTiO3
Author(s) -
Young Jun Chang,
Guru Khalsa,
Luca Moreschini,
Andrew L. Walter,
Aaron Bostwick,
Karsten Horn,
Allan H. MacDonald,
Eli Rotenberg
Publication year - 2013
Publication title -
physical review. b, condensed matter and materials physics
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.87.115212
Subject(s) - degenerate energy levels , degeneracy (biology) , condensed matter physics , electronic band structure , band gap , materials science , physics , energy (signal processing) , semiconductor , electronic structure , photoemission spectroscopy , crystallography , nuclear magnetic resonance , bioinformatics , chemistry , quantum mechanics , optoelectronics , x ray photoelectron spectroscopy , biology
We use angle-resolved photoemission spectroscopy to study the influence of mechanically induced uniaxial strain on the electronic structure of the oxide semiconductor SrTiO3. We observe an orbital splitting between the Ti 3dyz and 3dxy bands, which are degenerate when unperturbed. Using the k·p method, we qualitatively explain the direction and the size of the observed energy splitting. Our comprehensive understanding of band splitting explains the strain induced mobility enhancement of electron-doped SrTiO33 in terms of band degeneracy breaking and reduced interband scattering. Our approach can be extended to differently strained oxide systems