z-logo
open-access-imgOpen Access
Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires
Author(s) -
Songrui Zhao,
Zetian Mi,
Md Golam Kibria,
Q. Li,
George T. Wang
Publication year - 2012
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.85.245313
Subject(s) - nanowire , photoluminescence , materials science , doping , exciton , dopant , surface states , condensed matter physics , x ray photoelectron spectroscopy , fermi level , electron , optoelectronics , physics , surface (topology) , nuclear magnetic resonance , geometry , mathematics , quantum mechanics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom