Open AccessUnderstanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires
Author(s) -
Songrui Zhao,
Zetian Mi,
Md Golam Kibria,
Q. Li,
G. T. Wang
Publication year - 2012
Publication title -
physical review. b, condensed matter and materials physics
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.85.245313
Subject(s) - nanowire , photoluminescence , materials science , doping , exciton , dopant , surface states , condensed matter physics , x ray photoelectron spectroscopy , fermi level , electron , optoelectronics , physics , surface (topology) , nuclear magnetic resonance , geometry , mathematics , quantum mechanics