
Spin accumulation near Fe/GaAs (001) interfaces: The role of semiconductor band structure
Author(s) -
Qi Hu,
E. S. Garlid,
P. A. Crowell,
C. J. Palmstrøm
Publication year - 2011
Publication title -
physical review. b, condensed matter and materials physics
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.84.085306
Subject(s) - heterojunction , condensed matter physics , semiconductor , schottky barrier , degenerate energy levels , materials science , spin (aerodynamics) , electronic band structure , annealing (glass) , schottky diode , spin polarization , optoelectronics , physics , electron , quantum mechanics , diode , composite material , thermodynamics