Electrical resistivity and magnetoresistance of single-crystalTb 5 Si 2.2 Ge 1.8
Author(s) -
Min Zou,
V. K. Pecharsky,
K. A. Gschneidner,
Yaroslav Mudryk,
D. L. Schlagel,
T. A. Lograsso
Publication year - 2009
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.80.174411
Subject(s) - magnetoresistance , anisotropy , condensed matter physics , electrical resistivity and conductivity , materials science , magnetocrystalline anisotropy , field (mathematics) , physics , magnetic field , magnetic anisotropy , magnetization , mathematics , optics , quantum mechanics , pure mathematics
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