Current-driven hysteresis effects in manganite spintronics devices | Zendy

I. Pallecchi | Zendy; L. Pellegrino | Zendy; Andrea D. Caviglia | Zendy; E. Bellingeri | Zendy; Giovanna Canu | Zendy; Gian Carlo Gazzadi | Zendy; A. S. Siri | Zendy; D. Marré | Zendy

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Current-driven hysteresis effects in manganite spintronics devices

Author(s) -

I. Pallecchi,

L. Pellegrino,

Andrea D. Caviglia,

E. Bellingeri,

Giovanna Canu,

Gian Carlo Gazzadi,

A. S. Siri,

D. Marré

Publication year - 2006

Publication title -

physical review b

Language(s) - English

Resource type - Journals

eISSN - 1538-4489

pISSN - 1098-0121

DOI - 10.1103/physrevb.74.014434

Subject(s) - spintronics , condensed matter physics , manganite , hysteresis , asymmetry , polarity (international relations) , current (fluid) , materials science , magnetic field , spin (aerodynamics) , physics , ferromagnetism , chemistry , biochemistry , quantum mechanics , cell , thermodynamics

By carrying out differential resistance measurements in oxygen deficient La0.67Ba0.33MnO3− thin films atdifferent magnetic fields, in submicrometric constricted regions patterned by focused ion beam, we find evidenceof hysteretic resistance behavior as a function of both the external magnetic field and dc bias current.The resistance curves exhibit a marked asymmetry with respect to the polarity of the current. We suggest thatthe spin-polarized injected current exerts a torque on magnetic domains, whose rotation accounts for thehysteretic resistance changes. The memory effect of such constrictions is potentially interesting both forstudying micromagnetic effects and in view of spintronics devices applications

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