Open AccessElectronic structure and bonding inMo 3 Si Mo 5 Si 3
Author(s) -
D. A. Pankhurst,
Zhikang Yuan,
D. Nguyen-Manh,
MarieLaure Abel,
Guosheng Shao,
J. F. Watts,
D. G. Pettifor,
P. Tsakiropoulos
Publication year - 2005
Publication title -
physical review b
Language(s) - English
Resource type - Journals
eISSN - 1538-4489
pISSN - 1098-0121
DOI - 10.1103/physrevb.71.075114
Subject(s) - crystallography , spectral line , electronic structure , physics , valence (chemistry) , energy (signal processing) , materials science , fermi level , valence band , condensed matter physics , atomic physics , electron , band gap , chemistry , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom