Structures of dislocations in GaAs and their modification by impurities | Zendy

Peter Sitch | Zendy; R. Jones | Zendy; Sven Öberg | Zendy; M. I. Heggie | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Structures of dislocations in GaAs and their modification by impurities

Author(s) -

Peter Sitch,

R. Jones,

Sven Öberg,

M. I. Heggie

Publication year - 1994

Publication title -

physical review. b, condensed matter

Language(s) - English

Resource type - Journals

eISSN - 1095-3795

pISSN - 0163-1829

DOI - 10.1103/physrevb.50.17717

Subject(s) - impurity , condensed matter physics , partial dislocations , materials science , atom (system on chip) , acceptor , crystallography , dislocation , physics , atomic physics , quantum mechanics , chemistry , computer science , embedded system

Local density functional theory is used to show that both α and β dislocations in GaAs are reconstructed. This is done by relaxing large 158-atom H-terminated clusters of GaAs containing 90° partial dislocations. The reconstruction is strongly influenced by impurities: acceptor pairs destroy the reconstruction of β partials but strengthen it for α dislocations. Donors have opposite effects. The implication of these results for the pinning of dislocations in GaAs is discussed.Godkänd; 1994; 20080425 (ysko

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research