Open AccessFluorine-incorporation scheme in fluorinated amorphous silicon prepared by various methods
Author(s) -
Minoru Kumeda,
Yukio Takahashi,
Tatsuo Shimizu
Publication year - 1987
Publication title -
physical review. b, condensed matter
Language(s) - English
Resource type - Journals
eISSN - 1095-3795
pISSN - 0163-1829
DOI - 10.1103/physrevb.36.2713
Subject(s) - amorphous solid , materials science , amorphous silicon , glow discharge , sputter deposition , infrared , silicon , analytical chemistry (journal) , fluorine , sputtering , atomic physics , absorption (acoustics) , nuclear magnetic resonance , crystallography , physics , optics , thin film , nanotechnology , crystalline silicon , optoelectronics , chemistry , plasma , nuclear physics , chromatography , composite material , metallurgy
Fluorinated amorphous silicon (a-Si:F) films are prepared by three different methods: glow-discharge decomposition of SiF2 gas, magnetron sputtering, and conventional diode sputtering. The incorporation scheme of F atoms is investigated by means of nuclear magnetic resonance (NMR) and infrared (ir) absorption measurements. 19F NMR signals observed at 4.2 K can be simulated by superposing signals from dispersed F atoms, clustered F atoms, SiF4 molecules, and SiF3 species. The content of SiF4 increases by annealing in agreement with an increase in the intensity of ir absorption at 1020 cm-1. 19F NMR signals at 77 K and at room temperature show the effect of motional narrowing because SiF4 molecules move easily in the amorphous network
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