Open AccessTunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures
Author(s) -
Dragomir Davidović,
Hanbin Ying,
Jason Dark,
Bryan Wier,
L. Ge,
Nelson E. Lourenco,
Anup P. Omprakash,
Martin Mourigal,
John D. Cressler
Publication year - 2017
Publication title -
physical review applied
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.883
H-Index - 75
eISSN - 2331-7043
pISSN - 2331-7019
DOI - 10.1103/physrevapplied.8.024015
Subject(s) - optoelectronics , materials science , transconductance , heterojunction , bipolar junction transistor , germanium , silicon , silicon germanium , electronics , quantum tunnelling , transistor , amplifier , heterojunction bipolar transistor , electronic circuit , engineering physics , electrical engineering , physics , cmos , voltage , engineering
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