Composition Dependence of the Band Gap and Doping inCu2O-Based Alloys as Predicted by an Extension of the Dilute-Defect Model | Zendy

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Composition Dependence of the Band Gap and Doping inCu2O-Based Alloys as Predicted by an Extension of the Dilute-Defect Model

Author(s) -

Vladan Stevanović,

Andriy Zakutayev,

Stephan Lany

Publication year - 2014

Publication title -

physical review applied

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.883

H-Index - 75

eISSN - 2331-7043

pISSN - 2331-7019

DOI - 10.1103/physrevapplied.2.044005

Subject(s) - doping , chalcogenide , materials science , band gap , algorithm , computer science , optoelectronics

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