Open AccessSpin-Orbit-Torque Switching in 20-nm Perpendicular Magnetic Tunnel Junctions
Author(s) -
Mukund Bapna,
Brad Parks,
Samuel D. Oberdick,
Hamid Almasi,
Weigang Wang,
Sara A. Majetich
Publication year - 2018
Publication title -
physical review applied
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.883
H-Index - 75
eISSN - 2331-7043
pISSN - 2331-7019
DOI - 10.1103/physrevapplied.10.024013
Subject(s) - magnetoresistive random access memory , torque , spin transfer torque , tunnel magnetoresistance , magnetoresistance , condensed matter physics , perpendicular , magnetization , materials science , voltage , spin (aerodynamics) , orbit (dynamics) , tunnel junction , physics , magnetic field , electrical engineering , computer science , ferromagnetism , quantum tunnelling , random access memory , engineering , geometry , mathematics , quantum mechanics , aerospace engineering , computer hardware , thermodynamics