Spin-Orbit-Torque Switching in 20-nm Perpendicular Magnetic Tunnel Junctions | Zendy

Mukund Bapna | Zendy; Brad Parks | Zendy; Samuel D. Oberdick | Zendy; Hamid Almasi | Zendy; Weigang Wang | Zendy; Sara A. Majetich | Zendy

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Spin-Orbit-Torque Switching in 20-nm Perpendicular Magnetic Tunnel Junctions

Author(s) -

Mukund Bapna,

Brad Parks,

Samuel D. Oberdick,

Hamid Almasi,

Weigang Wang,

Sara A. Majetich

Publication year - 2018

Publication title -

physical review applied

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.883

H-Index - 75

eISSN - 2331-7043

pISSN - 2331-7019

DOI - 10.1103/physrevapplied.10.024013

Subject(s) - magnetoresistive random access memory , torque , spin transfer torque , tunnel magnetoresistance , magnetoresistance , condensed matter physics , perpendicular , magnetization , materials science , voltage , spin (aerodynamics) , orbit (dynamics) , tunnel junction , physics , magnetic field , electrical engineering , computer science , ferromagnetism , quantum tunnelling , random access memory , engineering , geometry , mathematics , quantum mechanics , aerospace engineering , computer hardware , thermodynamics

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